We evaluate the effects of the holes geometry drilled by a femtosecond laser on a stainless alloy with various defocused irradiation time, which ranges from 0 min to 1 h. The laser ablation efficiency is increased by a factor of 3 when the irradiation time is elevated from 0 to 30 min. Also, the morphology of the hole is observed by a scanning electron microscope, where the result indicates that the defocused irradiation time has a significant influence on the morphology changes. The reason for such changes is discussed based on the pretreatment effect and the confined plasma plume. As an application example, the microchannel is fabricated by a femtosecond laser combined with the defocused irradiation to demonstrate the advantage of the proposed method in fabricating functional structures.

We propose a high temperature-sensitive long period fiber grating (LPFG) sensor fabricated by using the femtosecond laser transversal-scanning method. The femtosecond pulses scan over the whole fiber core and some part of the cladding region; the modified regions are more extended. It is found that the LPFG-I fabricated by the transversal-scanning method shows higher temperature sensitivity and better temperature uniformity than that of LPFG-II written by the femtosecond laser point-by-point method. The LPFG-I with a temperature sensitivity of 75.96 pm/°C in the range of 25°C–400°C is measured. Moreover, in the range from 400°C to 800°C, a higher temperature sensitivity of 148.64 pm/°C and good linearity of 0.99 are achieved, while the temperature sensitivity of LPFG-II is only 95.55 pm/°C. LPFG-I exhibits better temperature characteristics, which, to the best of our knowledge, has the highest sensitivity in silica fiber temperature sensors.

The optical constants, photoluminescence properties, and resistivity of Al-Alq3 thin films prepared by the thermal co-evaporation method on a silicon substrate are studied with various Al fractions. A variable angle spectroscopic ellipsometry is employed to determine the optical constants in the wavelength from 300 to 1200 nm at incidence angles of 65°, 70°, and 75°, respectively. Both the refractive indices and extinction coefficient apparently increase with increasing Al fractions. The intensity of photoluminescence spectra gradually increases with decreasing Al fractions due to intrinsic energy level transition of Alq3 organic semiconductor in the ultraviolet wave band. The resistivity decreases from 42.1 to 3.36 Ω·cm with increasing Al fraction from 40% to 70%, resulting in a larger emission intensity in photoluminescence spectra for the 40% Al fraction sample.